発表論文
2017年
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“Light emission enhancement from Ge quantum dots with phosphorous δ-doped neighboring confinement structures”
K. Sawano, T. Nakama, K. Mizutani, N. Harada, X. Xu, T. Maruizumi Journal of Crystal Growth 477, 131–134 (2017) DOI: https://doi.org/10.1016/j.jcrysgro.2017.03.008(外部サイト) |
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“Hole mobility in strained Si/SiGe/vicinal Si(110) grown by gas source MBE”
Keisuke Arimoto, Sosuke Yagi, Junji Yamanaka, Kosuke O. Hara, Kentarou Sawano, Noritaka Usami, Kiyokazu Nakagawa Journal of Crystal Growth 468, 625-629 (2017) DOI: https://doi.org/10.1016/j.jcrysgro.2016.12.076(外部サイト) |
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“TEM Observation of Si0.99C0.01 Thin Films with Arsenic-Ion-, Boron-Ion-, and Silicon-Ion-Implantation Followed by Rapid Thermal Annealing”
Junji Yamanaka, Shigenori Inoue, Keisuke Arimoto, Kiyokazu Nakagawa, Kentarou Sawano, Yasuhiro Shiraki, Atsushi Moriya, Yasuhiro Inokuchi, Yasuo Kunii Journal of Materials Science and Chemical Engineering, 2017, 5, 15-25 DOI: https://doi.org/10.4236/msce.2017.51003(外部サイト) |
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“Large impact of impurity concentration on spin transport in degenerate n-Ge”
M. Yamada, Y. Fujita, M. Tsukahara, S. Yamada, K. Sawano, and K. Hamaya Physical Review B 95, 161304 (R) 1~5 (2017) DOI: https://doi.org/10.1103/PhysRevB.95.161304(外部サイト) |
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“Thermoelectric Properties of Epitaxial b-FeSi2 Thin Films on Si(111) and Approach for Their Enhancement”
Tatsuhiko Taniguchi, Shunya Sakane, Shunsuke Aoki, Ryo Okuhata, Takafumi Ishibe, Kentaro Watanabe, Takeyuki Suzuki, Takeshi Fujita, Kentarou Sawano, and Yoshiaki Nakamura Journal of Electronic Materials, Vol. 46, No. 5, 3235-3241 (2017) DOI: https://doi.org/10.1007/s11664-016-4997-0(外部サイト) |
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“Study on ion implantation conditions in fabricating compressively strained Si/relaxed Si1−xCx heterostructures using the defect control by ion implantation technique”
You Arisawa, Kentarou Sawano, Noritaka Usami Journal of Crystal Growth 468, 601-604 (2017). DOI: https://doi.org/10.1016/j.jcrysgro.2016.12.065(外部サイト) |
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“Thermal stability of compressively strained Si/relaxed Si1-xCx heterostructures formed on Ar ion implanted Si (100) substrates”
You Arisawa, Yusuke Hoshi, Kentarou Sawano, Junji Yamanaka, Keisuke Arimoto, Chiaya Yamamoto, Noritaka Usami Materials Science in Semiconductor Processing 70, 127-132 (2017) DOI: https://doi.org/10.1016/j.mssp.2016.11.024(外部サイト) |
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“Highly n-doped germanium-on-insulator microdisks with circular Bragg gratings”
Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, and Takuya Maruizumi Optics Express 25, 6550-6560 (2017) DOI: https://doi.org/10.1364/OE.25.006550(外部サイト) |
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“Pattern-dependent anisotropic stress evaluation in SiGe epitaxially grown on a Si substrate with selective Ar+ ion implantation using oil-immersion Raman spectroscopy”
Shotaro Yamamoto, Daisuke Kosemura, Kazuma Takeuchi, Seiya Ishihara, Kentarou Sawano, Hiroshi Nohira and Atsushi Ogura Japanese Journal of Applied Physics 56, 051301 (2017) DOI: https://doi.org//10.7567/JJAP.56.051301(外部サイト) |
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“Spin Transport and Relaxation up to 250 K in Heavily Doped n-Type Ge Detected Using Co2FeAl0.5Si0.5 Electrodes”
Y. Fujita, M. Yamada, M. Tsukahara, T. Oka, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya Physical Review Applied 8, 014007 (2017) DOI: https://doi.org/10.1103/PhysRevApplied.8.014007(外部サイト) |
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“Room-temperature spin transport in n-Ge probed by four-terminal nonlocal measurements”
Michihiro Yamada, Makoto Tsukahara, Yuichi Fujita, Takahiro Naito, Shinya Yamada, Kentarou Sawano, and Kohei Hamaya Applied Physics Express 10, 093001 (2017) DOI: https://doi.org//10.7567/APEX.10.093001(外部サイト) |
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“Control of electrical properties in Heusler-alloy/Ge Schottky tunnel contacts by using phosphorous δ-doping with Si-layer insertion”
Michihiro Yamada, Yuichi Fujita, Shinya Yamada, Takeshi Kanashima, Kentarou Sawano, Kohei Hamaya Materials Science in Semiconductor Processing 70, 83–85 (2017) DOI: https://doi.org//10.1016/j.mssp.2016.07.025(外部サイト) |
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Fabrication of high-quality strain relaxed SiGe(1 1 0) films by controlling defects via ion implantation
M. Kato, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Sawano Journal of Crystal Growth 477, 197–200 (2017). DOI: https://doi.org//10.1016/j.jcrysgro.2017.05.022(外部サイト) |
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2016年
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“Structural and electrical properties of Ge(111) films grown on Si(111) substrates and application to Ge(111)-on-Insulator”
Sawano, Y. Hoshi, S. Kubo, K. Arimoto, J. Yamanaka, K. Nakagawa, K. Hamaya, M. Miyao, Y. Shiraki Thin Solid Films 613, 24-28 (2016). DOI: 10.1016/j.tsf.2015.11.020(外部サイト) |
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“Straining of Group IV Semiconductor Materials for Bandgap and Mobility Engineering”
Kentarou Sawano, Xuejun Xu, Shiori Konoshima, Nayuta Shitara, Takeshi Ohno, and Takuya Maruizumi ECS transaction 75, 191-197 (2016) DOI: https://doi.org/10.1149/07504.0191ecst(外部サイト) |
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“Anisotropic Strain Introduction into Si/Ge Hetero Structures”
Kentarou Sawano, Shiori Konoshima, Junji Yamanaka, Keisuke Arimoto, and Kiyokazu Nakagawa ECS transaction 75, 563-569 (2016) DOI: https://doi.org/10.1149/07508.0563ecst(外部サイト) |
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“Compressively strained Si/Si1-xCx heterostructures formed on Ar ion implanted Si(100) substrates”
Yusuke Hoshi, You Arisawa, Keisuke Arimoto, Junji Yamanaka, Kiyokazu Nakagawa, Kentarou Sawano, and Noritaka Usami Japanese Journal of Applied Physics 55, 031302 (2016). DOI: https://doi.org/10.7567/JJAP.55.031302(外部サイト) |
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“Suppression of segregation of the phosphorus δ-doping layer in germanium by incorporation of carbon”
Michihiro Yamada, Kentarou Sawano, Masashi Uematsu, Yasuo Shimizu, Koji Inoue, Yasuyoshi Nagai, and Kohei M. Itoh Japanese Journal of Applied Physics 55, 031304-1~5 (2016). DOI: https://doi.org/10.7567/JJAP.55.031304(外部サイト) |
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“Impact of silicon quantum dot super lattice and quantum well structure as intermediate layer on p-i-n silicon solar cells”
Mohammad Maksudur Rahman, Ming-Yi Lee, Yi-Chia Tsai, Akio Higo, Halubai Sekhar, Makoto Igarashi1, Mohd Erman Syazwan, Yusuke Hoshi, Kentarou Sawano, Noritaka Usami, Yiming Li and Seiji Samukawa Progress in Photovoltaics: Research and Applications 24, 774-780 (2016). DOI: 10.1002/pip.2726(外部サイト) |
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“Enhanced light emission from germanium microdisks on silicon by surface passivation through thermal oxidation”
Xuejun Xu, Hideaki Hashimoto, Kentarou Sawano, Hiroshi Nohira, and Takuya Maruizumi Applied Physics Express 9, 052101-1~4 (2016) DOI: https://doi.org/10.7567/APEX.9.052101(外部サイト) |
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“A low-temperature fabricated gate-stack structure for Ge-based MOSFET with ferromagnetic epitaxial Heusler-alloy/Ge electrodes”
Yuichi Fujita, Michihiro Yamada, Yuta Nagatomi, Keisuke Yamamoto, Shinya Yamada, Kentarou Sawano, Takeshi Kanashima, Hiroshi Nakashima, and Kohei Hamaya Japanese Journal of Applied Physics 55, 063001-1~4 (2016). DOI:10.7567/JJAP.55.063001(外部サイト) |
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“Temperature-independent spin relaxation in heavily doped n-type germanium”
Fujita, M. Yamada, S. Yamada, T. Kanashima, K. Sawano, and K. Hamaya Physical Review B 94, 245302-1~5 (2016) DOI: https://doi.org/10.1103/PhysRevB.94.245302(外部サイト) |
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“Thermal conduction in Si and SiGe phononic crystals explained by phonon mean free path spectrum”
Masahiro Nomura, Junki Nakagawa, Kentarou Sawano, Jeremie Maire, and Sebastian Volz Applied Physics Letters 109, 173104-1~4 (2016) DOI: https://doi.org/10.1063/1.4966190(外部サイト) |
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2014年
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“Formation of Ge(111) on Insulator by Ge epitaxy on Si(111) and layer transfer” K. Sawano, Y. Hoshi, S. Endo, T. Nagashima, K. Arimoto, J. Yamanaka, K. Nakagawa, S. Yamada, K. Hamaya, M. Miyao and Y. Shiraki Thin Solid Films 557, 76–79 (2014) DOI: https://doi.org/10.1016/j.tsf.2013.10.074(外部サイト) |
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“Uniaxially strained SiGe(111) and SiGe(100) grown on selectively ion-implanted substrates” K. Sawano, Y. Hoshi, S. Kubo, S. Yamada, K. Nakagawa, Y. Shiraki Journal of Crystal Growth 401, 758–761 (2014). DOI: https://doi.org/10.1016/j.jcrysgro.2014.02.014(外部サイト) |
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“Highly n-doped, tensile-strained Ge grown on Si by molecular beam epitaxy” Keisuke Nishida, Xuejun Xu, Kentarou Sawano, Takuya Maruizumi, Yasuhiro Shiraki Thin Solid Films 557, 66-69 (2014) DOI: https://doi.org/10.1016/j.tsf.2013.10.082(外部サイト) |
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“Greatly enhanced generation efficiency of pure spin currents in Ge using Heusler compound Co2FeSi electrodes” Kenji Kasahara, Yuichi Fujita, Shinya Yamada, Kentarou Sawano, Masanobu Miyao, and Kohei Hamaya Applied Physics Express 7, 033002 (2014) DOI: https://doi.org/10.7567/APEX.7.033002(外部サイト) |
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“Room-temperature electrical creation of spin accumulation in n-Ge using highly resistive Fe3Si/n+-Ge Schottky-tunnel contacts” Kohei Hamaya, Gotaro Takemoto, Yuzo Baba, Kenji Kasahara, Shinya Yamada, Kentarou Sawano, Masanobu Miyao Thin Solid Films 557 (2014) 382–385 DOI: https://doi.org/10.1016/j.tsf.2013.08.120(外部サイト) |
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“Charge-noise-free Lateral Quantum Dot Devices with Undoped Si/SiGe Wafer” T. Obata, K. Takeda, J. Kamioka, T. Kodera, W.M. Akhtar, K. Sawano, S. Oda, Y. Shiraki, and S. Tarucha Proceedings of the 12th Asia Pacific Physics Conference, JPS Conf. Proc. , 012030 (2014) |
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“Reliable reduction of Fermi-level pinning at atomically matched metal/Ge interfaces by sulfur treatment” K. Kasahara, S. Yamada, T. Sakurai, K. Sawano, H. Nohira, M. Miyao, and K. Hamaya Applied Physics Letters 104, 172109 (2014) ; DOI: https://doi.org/10.1063/1.4875016(外部サイト) |
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“Cubic Rashba Spin-Orbit Interaction of a Two-Dimensional Hole Gas in a Strained-Ge/SiGe Quantum Well” Rai Moriya, Kentarou Sawano, Yusuke Hoshi, Satoru Masubuchi, Yasuhiro Shiraki, Andreas Wild, Christian Neumann, Gerhard Abstreiter, Dominique Bougeard, Takaaki Koga, and Tomoki Machida Physical Review Letters 113, 086601 (2014). DOI: https://doi.org/10.1103/PhysRevLett.113.086601(外部サイト) |
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2013年
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“On the origin of the uniaxial strain induced in Si/Ge heterostructures with selective ion implantation technique” K. Sawano, Y. Hoshi, S. Nagakura, K. Arimoto, K. Nakagawa, N. Usami, Y. Shiraki Journal of Crystal Growth 378, 251–253 (2013). DOI: 10.1016/j.jcrysgro.2012.12.100(外部サイト) |
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“Formation of compressively strained SiGe/Si(110) heterostructures and their characterization”, K. Arimoto, T. Obata, H. Furukawa, J. Yamanaka, K. Nakagawa, K. Sawano and Y. Shiraki, J. Cryst. Growth, 362, pp. 282-287 (2013). doi:10.1016/j.jcrysgro.2011.12.082(外部サイト) |
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”Room-temperature sign reversed spin accumulation signals in silicon-based devices using an atomically smooth Fe3Si/Si(111) contact” Y. Fujita, S. Yamada, Y. Ando, K. Sawano, H. Itoh, M. Miyao, and K. Hamaya J. Appl. Phys. 113, 013916 (2013). DOI: 10.1063/1.4773072(外部サイト) |
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“Room-temperature detection of spin accumulation in silicon across Schottky tunnel barriers using a metal–oxide–semiconductor field effect transistor structure (invited)” K. Hamaya, Y. Ando, K. Masaki, Y. Maeda, Y. Fujita, S. Yamada, K. Sawano and M. Miyao J. Appl. Phys. 113, 17C501 (2013). |
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“An ultra-thin buffer layer for Ge epitaxial layers on Si” M. Kawano, S. Yamada, K. Tanikawa, K. Sawano, M. Miyao, and K. Hamaya Appl. Phys. Lett. 102, 121908 (2013) DOI: https://doi.org/10.1063/1.4798659(外部サイト) |
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“Qualitative study of temperature-dependent spin signals in n-Ge-based lateral devices with Fe3Si/n+-Ge Schottky-tunnel contacts” K. Hamaya, Y. Baba, G. Takemoto, K. Kasahara, S. Yamada, K. Sawano, and M. Miyao J. Appl. Phys. 113, 183713 (2013) DOI: https://doi.org/10.1063/1.4804320(外部サイト) |
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“Gas-source MBE growth of strain-relaxed Si1-xCx on Si (100) substrates” Keisuke Arimoto, Shoichiro Sakai, Hiroshi Furukawa, Junji Yamanaka, Kiyokazu Nakagawa, Noritaka Usami, Yusuke Hoshi, Kentarou Sawano, Yasuhiro Shiraki Journal of Crystal Growth 378, 212–217 (2013). DOI: https://doi.org/10.1016/j.jcrysgro.2012.12.152(外部サイト) |
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“Formation of compressively strained Si/S1-xCx/Si(100) heterostructures using gas-source molecular beam epitaxy”, K. Arimoto, H. Furukawa, J. Yamanaka, C. Yamamoto, K. Nakagawa, N. Usami, K. Sawano, Y. Shiraki Journal of Crystal Growth 362, 276-281(2013). DOI: 10.1016/j.jcrysgro.2011.12.084(外部サイト) |
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“AR-HPES study on chemical bonding states of high-κ/high-μ gate stacks for advanced CMOS” H. Nohira, A. Komatsu, K. Yamashita, K. Kakushima, H. Iwai, K. Sawano, Y. Shiraki Journal of Electron Spectroscopy and Related Phenomena 190, 295–301 (2013). DOI: https://doi.org/10.1016/j.elspec.2013.06.010(外部サイト) |
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